Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tape & Reel (TR)
- Gate Charge Qg Max Vgs
- 53nC @ 10V
- Continuous Drain Current Id
- 19A
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Power Dissipation
- 3.13W
- Vgsth Max Id
- 4V @ 250μA
- Drain To Source Breakdown Voltage
- 200V
- Yayın Yılı
- 2004
- Akım Değeri
- 19A
- Seri
- QFET®
- Weight
- 1.31247g
- Vgs Max
- ±30V
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 30V
- Turn Off Delay Time
- 135 ns
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 1080pF @ 25V
- Current Continuous Drain Id25
- 19A Tc
- Genişlik
- 9.65mm
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 5 Weeks
- Power Dissipation Max
- 3.13W Ta 139W Tc
- Uzunluk
- 10.67mm
- Yükseklik
- 4.83mm
- Kurşunsuz
- Lead Free
- Fet Type
- N-Channel
- Rise Time
- 150ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Lifecycle Status
- ACTIVE (Last Updated: 16 hours ago)
- Montaj
- Surface Mount
- Terminal Formu
- GULL WING
- Fall Time Typ
- 115 ns
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