Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 9A Tc
- Input Capacitance Ciss Max Vds
- 2730pF @ 25V
- Contact Plating
- Tin
- Turn Off Delay Time
- 100 ns
- Gate To Source Voltage Vgs
- 30V
- Avalanche Energy Rating Eas
- 900 mJ
- Vgsth Max Id
- 5V @ 250μA
- Drain To Source Breakdown Voltage
- 900V
- Yayın Yılı
- 2007
- Power Dissipation
- 280W
- Montaj Tipi
- Through Hole
- Reach Svhc
- No SVHC
- Seri
- QFET®
- Vgs Max
- ±30V
- Weight
- 6.401g
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Ambalaj
- Tube
- Gate Charge Qg Max Vgs
- 58nC @ 10V
- Continuous Drain Current Id
- 9A
- RoHS Durumu
- ROHS3 Compliant
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Threshold Voltage
- 5V
- Terminal Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Drain Currentmax Abs Id
- 9A
- Turn On Delay Time
- 50 ns
- Fall Time Typ
- 75 ns
- Pin Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Rds On Max Id Vgs
- 1.4 Ω @ 4.5A, 10V
- Fet Type
- N-Channel
- Rise Time
- 120ns
- Power Dissipation Max
- 280W Tc
- Uzunluk
- 15.8mm
- Yükseklik
- 18.9mm
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