Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 4 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Qualification Status
- Not Qualified
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Element Configuration
- Single
- Ambalaj
- Tube
- Gate Charge Qg Max Vgs
- 285nC @ 10V
- Continuous Drain Current Id
- 90A
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Montaj Tipi
- Through Hole
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Seri
- QFET®
- Vgs Max
- ±25V
- Weight
- 6.401g
- Vgsth Max Id
- 4V @ 250μA
- Rise Time
- 760ns
- Fet Type
- N-Channel
- Drain To Source Breakdown Voltage
- 150V
- Power Dissipation Max
- 375W Tc
- Power Dissipation
- 6W
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn Off Delay Time
- 470 ns
- Rds On Max Id Vgs
- 18m Ω @ 45A, 10V
- Gate To Source Voltage Vgs
- 25V
- Fall Time Typ
- 410 ns
- Pin Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Current Continuous Drain Id25
- 90A Tc
- Input Capacitance Ciss Max Vds
- 8700pF @ 25V
- Turn On Delay Time
- 105 ns
- Number Of Elements
- 1
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Terminal Sayısı
- 3
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