Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Breakdown Voltage
- 150V
- Vgsth Max Id
- 4V @ 250μA
- Power Dissipation
- 375W
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e3
- Vgs Max
- ±25V
- Weight
- 6.401g
- Akım Değeri
- 90A
- Seri
- QFET®
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Continuous Drain Current Id
- 90A
- Gate Charge Qg Max Vgs
- 285nC @ 10V
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- Qualification Status
- Not Qualified
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 90A Tc
- Input Capacitance Ciss Max Vds
- 8700pF @ 25V
- Turn Off Delay Time
- 470 ns
- Contact Plating
- Tin
- Gate To Source Voltage Vgs
- 25V
- Fet Type
- N-Channel
- Rise Time
- 760ns
- Uzunluk
- 15.8mm
- Yükseklik
- 18.9mm
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 375W Tc
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 10 hours ago)
- Drive Voltage Max Rds On Min Rds On
- 10V
- ECCN Kodu
- EAR99
- Genişlik
- 5mm
- Element Configuration
- Single
- Fabrika Tedarik Süresi
- 10 Weeks
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
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