Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 2080pF @ 25V
- Turn On Delay Time
- 40 ns
- Drain Currentmax Abs Id
- 8A
- Current Continuous Drain Id25
- 8A Tc
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 3
- Number Of Elements
- 1
- Terminal Kaplaması
- MATTE TIN
- Transistor Application
- SWITCHING
- Gate To Source Voltage Vgs
- 30V
- Avalanche Energy Rating Eas
- 850 mJ
- Turn Off Delay Time
- 70 ns
- Rds On Max Id Vgs
- 1.9 Ω @ 4A, 10V
- Radyasyon Dayanımı
- No
- Fall Time Typ
- 70 ns
- Pin Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgs Max
- ±30V
- Weight
- 6.401g
- Seri
- QFET®
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e3
- Montaj
- Through Hole
- Power Dissipation
- 240W
- Power Dissipation Max
- 240W Tc
- Vgsth Max Id
- 5V @ 250μA
- Drain To Source Breakdown Voltage
- 900V
- Rise Time
- 110ns
- Fet Type
- N-Channel
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 4 Weeks
- Ambalaj
- Tube
- Element Configuration
- Single
- Continuous Drain Current Id
- 8A
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