Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 3220pF @ 25V
- Current Continuous Drain Id25
- 8A Tc
- Gate To Source Voltage Vgs
- 30V
- Avalanche Energy Rating Eas
- 850 mJ
- Turn Off Delay Time
- 122 ns
- Power Dissipation
- 225W
- Yayın Yılı
- 2005
- Drain To Source Breakdown Voltage
- 1kV
- Vgsth Max Id
- 5V @ 250μA
- Akım Değeri
- 8A
- Seri
- QFET®
- Weight
- 6.401g
- Vgs Max
- ±30V
- Drain To Source Voltage Vdss
- 1000V
- Reach Svhc
- No SVHC
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Gate Charge Qg Max Vgs
- 70nC @ 10V
- Additional Feature
- FAST SWITCHING
- Continuous Drain Current Id
- 8A
- Ambalaj
- Tube
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Threshold Voltage
- 5V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- 1kV
- Drain Currentmax Abs Id
- 8A
- Direnç
- 1.45Ohm
- Turn On Delay Time
- 50 ns
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Fall Time Typ
- 80 ns
- Rds On Max Id Vgs
- 1.45 Ω @ 4A, 10V
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