Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drive Voltage Max Rds On Min Rds On
- 10V
- Lifecycle Status
- ACTIVE (Last Updated: 5 hours ago)
- Montaj
- Through Hole
- Power Dissipation Max
- 310W Tc
- Kurşunsuz
- Lead Free
- Yükseklik
- 18.9mm
- Uzunluk
- 15.8mm
- Fet Type
- N-Channel
- Rise Time
- 640ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 4 Weeks
- Genişlik
- 5mm
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Turn On Delay Time
- 120 ns
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Threshold Voltage
- 5V
- Terminal Sayısı
- 3
- Voltage Rated Dc
- 200V
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 32m Ω @ 32.5A, 10V
- Fall Time Typ
- 275 ns
- Pulsed Drain Currentmax Idm
- 260A
- Pin Sayısı
- 3
- Reach Svhc
- No SVHC
- Vgs Max
- ±30V
- Weight
- 6.401g
- Akım Değeri
- 65A
- Seri
- QFET®
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Power Dissipation
- 310W
- Vgsth Max Id
- 5V @ 250μA
- Drain To Source Breakdown Voltage
- 200V
- Yayın Yılı
- 2001
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
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