Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2005
- Drain To Source Breakdown Voltage
- 150V
- Vgsth Max Id
- 4V @ 250μA
- Power Dissipation
- 250W
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e3
- Seri
- QFET®
- Akım Değeri
- 50A
- Weight
- 6.401g
- Vgs Max
- ±25V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Continuous Drain Current Id
- 50A
- Additional Feature
- FAST SWITCHING
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 50A Tc
- Input Capacitance Ciss Max Vds
- 3250pF @ 25V
- Radyasyon Dayanımı
- No
- Contact Plating
- Tin
- Turn Off Delay Time
- 210 ns
- Avalanche Energy Rating Eas
- 650 mJ
- Gate To Source Voltage Vgs
- 25V
- Fet Type
- N-Channel
- Rise Time
- 320ns
- Kurşunsuz
- Lead Free
- Yükseklik
- 20.1mm
- Uzunluk
- 15.8mm
- Power Dissipation Max
- 250W Tc
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 2 hours ago)
- Drive Voltage Max Rds On Min Rds On
- 10V
- ECCN Kodu
- EAR99
- Element Configuration
- Single
- Genişlik
- 5mm
- Fabrika Tedarik Süresi
- 5 Weeks
- Parça Durumu
- Active
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