Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 43.5A Tc
- Input Capacitance Ciss Max Vds
- 5600pF @ 25V
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 1
- Turn Off Delay Time
- 240 ns
- Avalanche Energy Rating Eas
- 1700 mJ
- Gate To Source Voltage Vgs
- 30V
- Drainsource On Resistancemax
- 0.069Ohm
- Radyasyon Dayanımı
- No
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Akım Değeri
- 43.5A
- Seri
- QFET®
- Vgs Max
- ±30V
- Weight
- 6.401g
- Yayın Yılı
- 2013
- Drain To Source Breakdown Voltage
- 300V
- Vgsth Max Id
- 5V @ 250μA
- Power Dissipation
- 310W
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Gate Charge Qg Max Vgs
- 150nC @ 10V
- Continuous Drain Current Id
- 43.5A
- Ambalaj
- Tube
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Turn On Delay Time
- 85 ns
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- 300V
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- HTS Kodu
- 8541.29.00.95
- Rds On Max Id Vgs
- 69m Ω @ 21.75A, 10V
- Pin Sayısı
- 3
- Fall Time Typ
- 230 ns
- Pulsed Drain Currentmax Idm
- 174A
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Drive Voltage Max Rds On Min Rds On
- 10V
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