Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 800 mJ
- Gate To Source Voltage Vgs
- 30V
- Turn Off Delay Time
- 120 ns
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Drainsource On Resistancemax
- 0.07Ohm
- Input Capacitance Ciss Max Vds
- 4000pF @ 25V
- Current Continuous Drain Id25
- 40A Tc
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Continuous Drain Current Id
- 40A
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Reach Svhc
- No SVHC
- Vgs Max
- ±30V
- Weight
- 6.401g
- Akım Değeri
- 40A
- Seri
- QFET®
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e3
- Power Dissipation
- 280W
- Vgsth Max Id
- 5V @ 250μA
- Drain To Source Breakdown Voltage
- 250V
- Yayın Yılı
- 2013
- Rds On Max Id Vgs
- 70m Ω @ 20A, 10V
- Fall Time Typ
- 165 ns
- Pin Sayısı
- 3
- Turn On Delay Time
- 70 ns
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Threshold Voltage
- 5V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 3
- Voltage Rated Dc
- 250V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 9 Weeks
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