Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Weight
- 6.401g
- Vgs Max
- ±30V
- Seri
- QFET®
- Akım Değeri
- 38.4A
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e3
- Power Dissipation
- 290W
- Yayın Yılı
- 2000
- Drain To Source Breakdown Voltage
- 300V
- Vgsth Max Id
- 5V @ 250μA
- Transistor Element Material
- SILICON
- Qualification Status
- Not Qualified
- RoHS Durumu
- RoHS Compliant
- Continuous Drain Current Id
- 38.4A
- Gate Charge Qg Max Vgs
- 120nC @ 10V
- Ambalaj
- Tube
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Input Capacitance Ciss Max Vds
- 4400pF @ 25V
- Current Continuous Drain Id25
- 38.4A Tc
- Number Of Elements
- 1
- Terminal Kaplaması
- Tin (Sn)
- Gate To Source Voltage Vgs
- 30V
- Turn Off Delay Time
- 170 ns
- Drainsource On Resistancemax
- 0.085Ohm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Uzunluk
- 15.8mm
- Yükseklik
- 18.9mm
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 290W Tc
- Rise Time
- 430ns
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 4 Weeks
- Parça Durumu
- Obsolete
- Element Configuration
- Single
- Genişlik
- 5mm
- ECCN Kodu
- EAR99
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