Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Ambalaj
- Tube
- Continuous Drain Current Id
- -36A
- Additional Feature
- FAST SWITCHING
- Gate Charge Qg Max Vgs
- 105nC @ 10V
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Qualification Status
- Not Qualified
- Vgsth Max Id
- 4V @ 250μA
- Drain To Source Breakdown Voltage
- -150V
- Yayın Yılı
- 2013
- Power Dissipation
- 294W
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Drain To Source Voltage Vdss
- 150V
- Reach Svhc
- No SVHC
- Weight
- 6.401g
- Vgs Max
- ±30V
- Seri
- QFET®
- Akım Değeri
- -36A
- Turn Off Delay Time
- 155 ns
- Gate To Source Voltage Vgs
- 30V
- Number Of Elements
- 1
- Terminal Kaplaması
- Tin (Sn)
- Current Continuous Drain Id25
- 36A Tc
- Input Capacitance Ciss Max Vds
- 3320pF @ 25V
- ECCN Kodu
- EAR99
- Element Configuration
- Single
- Genişlik
- 5mm
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 4 Weeks
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- P-Channel
- Rise Time
- 350ns
- Power Dissipation Max
- 294W Tc
- Uzunluk
- 15.8mm
- Yükseklik
- 18.9mm
- Kurşunsuz
- Lead Free
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
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