Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Genişlik
- 5mm
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 12 Weeks
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Yükseklik
- 18.9mm
- Uzunluk
- 15.8mm
- Power Dissipation Max
- 204W Tc
- Fet Type
- N-Channel
- Rise Time
- 270ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Pin Sayısı
- 3
- Fall Time Typ
- 210 ns
- Rds On Max Id Vgs
- 82m Ω @ 16A, 10V
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Threshold Voltage
- 4V
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- 200V
- Turn On Delay Time
- 25 ns
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Continuous Drain Current Id
- 32A
- Ambalaj
- Tube
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 204W
- Yayın Yılı
- 2004
- Drain To Source Breakdown Voltage
- 200V
- Vgsth Max Id
- 4V @ 250μA
- Seri
- QFET®
- Akım Değeri
- 32A
- Weight
- 6.401g
- Vgs Max
- ±30V
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