FQA13N80

Specifications

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

RoHS Durumu

RoHS Compliant

Kılıf / Paket

TO-3P-3, SC-65-3

Continuous Drain Current Id

12.6A

Gate Charge Qg Max Vgs

88nC @ 10V

Ambalaj

Tube

Element Configuration

Single

Montaj Tipi

Through Hole

Montaj

Through Hole

Vgs Max

±30V

Seri

QFET®

Akım Değeri

12.6A

Drive Voltage Max Rds On Min Rds On

10V

Yayın Yılı

2007

Drain To Source Breakdown Voltage

800V

Fet Type

N-Channel

Rise Time

150ns

Vgsth Max Id

5V @ 250μA

Kurşunsuz

Lead Free

Power Dissipation

300W

Power Dissipation Max

300W Tc

Rds On Max Id Vgs

750m Ω @ 6.3A, 10V

Turn Off Delay Time

155 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Avalanche Energy Rating Eas

1100 mJ

Gate To Source Voltage Vgs

30V

Drainsource On Resistancemax

0.75Ohm

Pin Sayısı

3

Pulsed Drain Currentmax Idm

50.4A

Fall Time Typ

110 ns

Current Continuous Drain Id25

12.6A Tc

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

3500pF @ 25V

Transistor Application

SWITCHING

Voltage Rated Dc

800V