Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Time
- 130ns
- Fet Type
- N-Channel
- Drain To Source Breakdown Voltage
- 900V
- Yayın Yılı
- 2007
- Vgsth Max Id
- 5V @ 250μA
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 300W Tc
- Power Dissipation
- 300W
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Seri
- QFET®
- Akım Değeri
- 11A
- Vgs Max
- ±30V
- Drive Voltage Max Rds On Min Rds On
- 10V
- ECCN Kodu
- EAR99
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Gate Charge Qg Max Vgs
- 80nC @ 10V
- Continuous Drain Current Id
- 11A
- Element Configuration
- Single
- Ambalaj
- Tube
- Parça Durumu
- Obsolete
- Qualification Status
- Not Qualified
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- RoHS Durumu
- RoHS Compliant
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- 900V
- Number Of Elements
- 1
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 11A Tc
- Input Capacitance Ciss Max Vds
- 3290pF @ 25V
- Pin Sayısı
- 3
- Pulsed Drain Currentmax Idm
- 44A
- Fall Time Typ
- 85 ns
- Rds On Max Id Vgs
- 1.1 Ω @ 5.5A, 10V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn Off Delay Time
- 130 ns
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
In Stock
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors