Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 4 Weeks
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Qualification Status
- Not Qualified
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Continuous Drain Current Id
- 10A
- Gate Charge Qg Max Vgs
- 58nC @ 10V
- Ambalaj
- Tube
- Element Configuration
- Single
- Genişlik
- 5mm
- Montaj Tipi
- Through Hole
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 16 hours ago)
- Weight
- 6.401g
- Vgs Max
- ±30V
- Seri
- QFET®
- Reach Svhc
- No SVHC
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Breakdown Voltage
- 800V
- Rise Time
- 130ns
- Fet Type
- N-Channel
- Vgsth Max Id
- 5V @ 250μA
- Uzunluk
- 15.8mm
- Yükseklik
- 18.9mm
- Kurşunsuz
- Lead Free
- Power Dissipation
- 240W
- Power Dissipation Max
- 240W Tc
- Rds On Max Id Vgs
- 1.1 Ω @ 5A, 10V
- Turn Off Delay Time
- 90 ns
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Avalanche Energy Rating Eas
- 920 mJ
- Gate To Source Voltage Vgs
- 30V
- Pin Sayısı
- 3
- Pulsed Drain Currentmax Idm
- 40A
- Fall Time Typ
- 80 ns
- Current Continuous Drain Id25
- 10A Tc
- Kurşunsuz Kodu
- yes
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