Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 150mW
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 1V
- Hfemin
- 70
- Akım Değeri
- -500mA
- Current Collector Cutoff Max
- 100nA ICBO
- Number Of Elements
- 1
- Terminal Formu
- GULL WING
- Collector Base Voltage Vcbo
- -35V
- Collector Emitter Voltage Vceo
- 30V
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Tin (Sn)
- Element Configuration
- Single
- Terminal Pozisyonu
- DUAL
- Transistor Type
- PNP
- Collectoremitter Saturation Voltage
- -100mV
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- SC-70, SOT-323
- Montaj Tipi
- Surface Mount
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 30V
- Emitter Base Voltage Vebo
- -5V
- Voltage Rated Dc
- -30V
- Çalışma Sıcaklığı
- 150°C TJ
- Polaritychannel Type
- PNP
- Ambalaj
- Tape & Reel (TR)
- Gain Bandwidth Product
- 200MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transition Frequency
- 200MHz
- Terminal Sayısı
- 3
- Radyasyon Dayanımı
- No
- Transistor Application
- AMPLIFIER
- Yayın Yılı
- 2014
- Max Breakdown Voltage
- 30V
- JESD-609 Kodu
- e3
- Montaj
- Surface Mount
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