Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Frequency Transition
- 250MHz
- Terminal Sayısı
- 3
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Emitter Base Voltage Vebo
- 10V
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Collector Base Voltage Vcbo
- 50V
- JESD-609 Kodu
- e3
- Weight
- 240mg
- Kurşunsuz Kodu
- yes
- Collectoremitter Breakdown Voltage
- 50V
- Parça Durumu
- Obsolete
- Terminal Pozisyonu
- BOTTOM
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Through Hole
- Fabrika Tedarik Süresi
- 6 Weeks
- Ambalaj
- Tape & Box (TB)
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 10mA 5V
- Akım Değeri
- 100mA
- Element Configuration
- Single
- Max Collector Current
- 100mA
- RoHS Durumu
- RoHS Compliant
- Current Collector Cutoff Max
- 100nA ICBO
- Pin Sayısı
- 3
- Yayın Yılı
- 2007
- Number Of Elements
- 1
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage Rated Dc
- 50V
- Max Power Dissipation
- 300mW
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- HTS Kodu
- 8541.21.00.95
- Polaritychannel Type
- NPN
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Hfemin
- 20
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