Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage Vebo
- 6V
- Collectoremitter Saturation Voltage
- 3V
- Weight
- 6.756g
- Kurşunsuz Kodu
- yes
- Collectoremitter Breakdown Voltage
- 800V
- Collector Base Voltage Vcbo
- 1.7kV
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Through Hole
- Ambalaj
- Tube
- Fabrika Tedarik Süresi
- 19 Weeks
- Dc Current Gain Hfe Min Ic Vce
- 5.5 @ 11A 5V
- Akım Değeri
- 20A
- Yükseklik
- 29mm
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Max Collector Current
- 30A
- Current Collector Cutoff Max
- 1mA
- Pin Sayısı
- 3
- Yayın Yılı
- 2014
- Number Of Elements
- 1
- Max Power Dissipation
- 200W
- Voltage Rated Dc
- 800V
- Kılıf / Paket
- TO-264-3, TO-264AA
- Transistor Application
- AMPLIFIER
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- Polaritychannel Type
- NPN
- Vce Saturation Max Ib Ic
- 3V @ 2.75A, 11A
- Radyasyon Dayanımı
- No
- Hfemin
- 5
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- 150°C TJ
- Max Junction Temperature Tj
- 150°C
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