Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 30MHz
- Transistor Application
- AMPLIFIER
- Collector Base Voltage Vcbo
- 200V
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Kurşunsuz
- Lead Free
- Dc Current Gain Hfe Min Ic Vce
- 90 @ 3A 4V
- Yayın Yılı
- 2009
- Number Of Elements
- 1
- Hfemin
- 50
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- NPN
- Çalışma Sıcaklığı
- 150°C TJ
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Fabrika Tedarik Süresi
- 6 Weeks
- Akım Değeri
- 10A
- JESD-609 Kodu
- e3
- Collectoremitter Saturation Voltage
- 500mV
- Pin Sayısı
- 3
- Parça Durumu
- Obsolete
- Kılıf / Paket
- TO-3P-3 Full Pack
- Frekans
- 30MHz
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Vce Saturation Max Ib Ic
- 500mV @ 500mA, 5A
- Montaj
- Through Hole
- Voltage Rated Dc
- 140V
- Max Collector Current
- 10A
- Collectoremitter Breakdown Voltage
- 140V
- Gain Bandwidth Product
- 30MHz
- RoHS Durumu
- RoHS Compliant
- Power Dissipation
- 80W
- Current Collector Cutoff Max
- 10μA ICBO
- Transistor Type
- NPN
- Emitter Base Voltage Vebo
- 6V
- Max Power Dissipation
- 80W
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