Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 30MHz
- Transistor Application
- AMPLIFIER
- Collector Base Voltage Vcbo
- 250V
- Element Configuration
- Single
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz
- Lead Free
- Dc Current Gain Hfe Min Ic Vce
- 55 @ 1A 5V
- Yayın Yılı
- 2005
- Number Of Elements
- 1
- Hfemin
- 55
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- NPN
- Çalışma Sıcaklığı
- 150°C TJ
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 6 Weeks
- JESD-609 Kodu
- e3
- Akım Değeri
- 10A
- Parça Durumu
- Obsolete
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- 400mV
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Frekans
- 30MHz
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Vce Saturation Max Ib Ic
- 3V @ 800mA, 8A
- Montaj
- Through Hole
- Voltage Rated Dc
- 140V
- Max Collector Current
- 17A
- Collectoremitter Breakdown Voltage
- 250V
- Gain Bandwidth Product
- 30MHz
- RoHS Durumu
- RoHS Compliant
- Power Dissipation
- 130W
- Current Collector Cutoff Max
- 5μA ICBO
- Transistor Type
- NPN
- Emitter Base Voltage Vebo
- 5V
- Max Power Dissipation
- 130W
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