Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Polaritychannel Type
- PNP
- Radyasyon Dayanımı
- No
- Hfemin
- 55
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- 150°C TJ
- Fabrika Tedarik Süresi
- 2 Weeks
- Terminal Sayısı
- 3
- Terminal Kaplaması
- TIN
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Parça Durumu
- Active
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- -400mV
- Genişlik
- 4.8mm
- JESD-609 Kodu
- e3
- Akım Değeri
- -15A
- Transistor Application
- AMPLIFIER
- Transition Frequency
- 30MHz
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Element Configuration
- Single
- Collector Base Voltage Vcbo
- -250V
- Montaj Tipi
- Through Hole
- Dc Current Gain Hfe Min Ic Vce
- 55 @ 1A 5V
- Yayın Yılı
- 2005
- Kurşunsuz
- Lead Free
- Power Dissipation
- 130W
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 15.6mm
- Gain Bandwidth Product
- 30MHz
- Current Collector Cutoff Max
- 5μA ICBO
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 130W
- Transistor Type
- PNP
- Yükseklik
- 19.9mm
- Emitter Base Voltage Vebo
- -5V
- Collector Emitter Voltage Vceo
- 250V
- Weight
- 6.401g
- Frekans
- 30MHz
- Kılıf / Paket
- TO-3P-3, SC-65-3
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