FDU7N60NZTU

Specifications

Yükseklik

7.57mm

Element Configuration

Single

REACH Uyumluluk Kodu

not_compliant

Seri

UniFET-II™

Input Capacitance Ciss Max Vds

730pF @ 25V

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Rds On Max Id Vgs

1.25 Ω @ 2.75A, 10V

Fabrika Tedarik Süresi

5 Weeks

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Ambalaj

Tube

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.8mm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation Max

90W Tc

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

17nC @ 10V

Turn Off Delay Time

40 ns

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

90W

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

5.5A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Terminal Sayısı

3

Vgs Max

±25V

Current Continuous Drain Id25

5.5A Tc

Pin Sayısı

3

Transistor Application

SWITCHING

Lifecycle Status

ACTIVE (Last Updated: 15 hours ago)

Turn On Delay Time

17.5 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED