FDT86256

Specifications

Radyasyon Dayanımı

No

Vgs Max

±20V

Drain Currentmax Abs Id

3A

Power Dissipation

2.3W

Rise Time

1.7ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Weight

188mg

Terminal Formu

GULL WING

Vgsth Max Id

4V @ 250μA

Ambalaj

Cut Tape (CT)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Rds On Max Id Vgs

845m Ω @ 1.2A, 10V

Input Capacitance Ciss Max Vds

73pF @ 75V

Yükseklik

1.7mm

Element Configuration

Single

Jesd30 Code

R-PDSO-G4

Power Dissipation Max

2.3W Ta 10W Tc

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Case Connection

DRAIN

Current Continuous Drain Id25

1.2A Ta 3A Tc

Terminal Sayısı

4

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

1.2A

Parça Durumu

Active

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

6V 10V

Terminal Pozisyonu

DUAL

Genişlik

3.7mm

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

2A

Turn On Delay Time

2.7 ns

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 13 hours ago)

Uzunluk

6.7mm

Fall Time Typ

2.6 ns

Drain To Source Breakdown Voltage

150V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes