Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 2W Tc
- Jesd30 Code
- R-PDSO-G4
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Contact Plating
- Tin
- Input Capacitance Ciss Max Vds
- 225pF @ 25V
- Element Configuration
- Single
- Yükseklik
- 1.6mm
- Rds On Max Id Vgs
- 3.4 Ω @ 1A, 10V
- Threshold Voltage
- 5V
- Terminal Formu
- GULL WING
- Weight
- 188mg
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 5V @ 250μA
- Radyasyon Dayanımı
- No
- Vgs Max
- ±30V
- Pin Sayısı
- 3
- Rise Time
- 30ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation
- 2W
- Drain Currentmax Abs Id
- 2A
- Turn Off Delay Time
- 10 ns
- Gate Charge Qg Max Vgs
- 6nC @ 10V
- Number Of Elements
- 1
- Avalanche Energy Rating Eas
- 46 mJ
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2009
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- Fall Time Typ
- 25 ns
- Uzunluk
- 6.5mm
- Drain To Source Breakdown Voltage
- 400V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- UniFET™
- Fabrika Tedarik Süresi
- 24 Weeks
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-261-4, TO-261AA
- Terminal Pozisyonu
- DUAL
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