FDS8840NZ

Specifications

Transistor Element Material

SILICON

Yayın Yılı

2009

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Genişlik

3.9mm

Yükseklik

1.575mm

Current Continuous Drain Id25

18.6A Ta

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.5W Ta

Continuous Drain Current Id

18.6A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Fall Time Typ

11 ns

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

130mg

JESD-609 Kodu

e4

Input Capacitance Ciss Max Vds

7535pF @ 20V

Turn Off Delay Time

57 ns

Fet Type

N-Channel

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

8

Gate Charge Qg Max Vgs

144nC @ 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

16 Weeks

Turn On Delay Time

18 ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Rise Time

13ns

Drainsource On Resistancemax

0.0045Ohm

Terminal Pozisyonu

DUAL

Uzunluk

4.9mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Vgsth Max Id

3V @ 250μA

Feedback Capmax Crss

670 pF