Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 17 ns
- Fabrika Tedarik Süresi
- 4 Weeks
- Montaj Tipi
- Through Hole
- Gate Charge Qg Max Vgs
- 18nC @ 10V
- Terminal Sayısı
- 3
- Number Of Elements
- 1
- Element Configuration
- Single
- Vgsth Max Id
- 5V @ 250μA
- Uzunluk
- 10.16mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rise Time
- 34ns
- Lifecycle Status
- ACTIVE (Last Updated: 20 hours ago)
- Montaj
- Through Hole
- Kılıf / Paket
- TO-220-3 Full Pack
- Pin Sayısı
- 3
- Kurşunsuz Kodu
- yes
- Power Dissipation
- 40W
- Vgs Max
- ±25V
- Seri
- UniFET-II™
- Drain To Source Breakdown Voltage
- 500V
- Rds On Max Id Vgs
- 1.2 Ω @ 4A, 10V
- Genişlik
- 4.7mm
- Ambalaj
- Tube
- Radyasyon Dayanımı
- No
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 26A
- Avalanche Energy Rating Eas
- 80 mJ
- Yayın Yılı
- 2013
- Transistor Element Material
- SILICON
- Power Dissipation Max
- 40W Tc
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 6.5A Tc
- Yükseklik
- 15.87mm
- Jedec95 Code
- TO-220AB
- Fall Time Typ
- 27 ns
- Gate To Source Voltage Vgs
- 25V
- ECCN Kodu
- EAR99
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