FDPF8N50NZ

Specifications

Power Dissipation Max

40.3W Tc

Current Continuous Drain Id25

8A Tc

Yükseklik

15.87mm

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Genişlik

4.7mm

Ambalaj

Tube

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Yayın Yılı

2013

Case Connection

ISOLATED

Fet Type

N-Channel

Parça Durumu

Active

Weight

2.27g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

735pF @ 25V

Turn Off Delay Time

43 ns

JESD-609 Kodu

e3

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

25V

Jedec95 Code

TO-220AB

Fall Time Typ

27 ns

Drain Currentmax Abs Id

8A

ECCN Kodu

EAR99

Continuous Drain Current Id

8A

Vgsth Max Id

5V @ 250μA

Uzunluk

10.16mm

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

ACTIVE (Last Updated: 20 hours ago)

Rise Time

34ns

Drainsource On Resistancemax

0.85Ohm

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

18nC @ 10V

Turn On Delay Time

17 ns

Fabrika Tedarik Süresi

9 Weeks

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

3