FDPF7N60NZ

Specifications

Radyasyon Dayanımı

No

Genişlik

4.9mm

Ambalaj

Tube

Yayın Yılı

2013

Avalanche Energy Rating Eas

275 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

26A

Transistor Element Material

SILICON

Direnç

1.25Ohm

Power Dissipation Max

33W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

6.5A Tc

Yükseklik

16.07mm

Jedec95 Code

TO-220AB

Fall Time Typ

60 ns

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

6.5A

ECCN Kodu

EAR99

Fet Type

N-Channel

Case Connection

ISOLATED

JESD-609 Kodu

e3

Turn Off Delay Time

40 ns

Input Capacitance Ciss Max Vds

730pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

2.27g

Parça Durumu

Active

Fabrika Tedarik Süresi

6 Weeks

Turn On Delay Time

17.5 ns

Gate Charge Qg Max Vgs

17nC @ 10V

Montaj Tipi

Through Hole

Terminal Sayısı

3

Number Of Elements

1

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.36mm

Vgsth Max Id

5V @ 250μA

Rise Time

70ns