Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 4 Weeks
- Turn On Delay Time
- 15 ns
- Gate Charge Qg Max Vgs
- 13nC @ 10V
- Reach Svhc
- No SVHC
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Contact Plating
- Tin
- Number Of Elements
- 1
- Element Configuration
- Single
- Uzunluk
- 10.16mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 5V @ 250μA
- Rise Time
- 20ns
- Lifecycle Status
- ACTIVE (Last Updated: 6 days ago)
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3 Full Pack
- Montaj
- Through Hole
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Seri
- UniFET-II™
- Vgs Max
- ±25V
- Power Dissipation
- 33W
- Rds On Max Id Vgs
- 2 Ω @ 2.25A, 10V
- Drain To Source Breakdown Voltage
- 600V
- Radyasyon Dayanımı
- No
- Ambalaj
- Tube
- Genişlik
- 4.7mm
- Yayın Yılı
- 2010
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Threshold Voltage
- 3V
- Transistor Element Material
- SILICON
- Direnç
- 2Ohm
- Power Dissipation Max
- 33W Tc
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yükseklik
- 15.87mm
- Current Continuous Drain Id25
- 4.5A Tc
- RoHS Durumu
- ROHS3 Compliant
- Fall Time Typ
- 20 ns
- Jedec95 Code
- TO-220AB
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