Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 10.36mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 5V @ 250μA
- Lifecycle Status
- ACTIVE (Last Updated: 6 days ago)
- Drainsource On Resistancemax
- 2Ohm
- Rise Time
- 21ns
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Montaj Tipi
- Through Hole
- Fabrika Tedarik Süresi
- 7 Weeks
- Turn On Delay Time
- 14 ns
- Number Of Elements
- 1
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Seri
- FRFET®
- Vgs Max
- ±30V
- Power Dissipation
- 28W
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Rds On Max Id Vgs
- 2 Ω @ 2A, 10V
- Drain To Source Breakdown Voltage
- 500V
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Kılıf / Paket
- TO-220-3 Full Pack
- Qualification Status
- Not Qualified
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kurşunsuz Kodu
- yes
- Power Dissipation Max
- 28W Tc
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 4A Tc
- Yükseklik
- 16.07mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Tin (Sn)
- Ambalaj
- Tube
- Genişlik
- 4.9mm
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2013
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- ISOLATED
- Fet Type
- N-Channel
- Weight
- 2.27g
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