Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 10.16mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 5V @ 250μA
- Power Dissipation Max
- 30W Tc
- Drainsource On Resistancemax
- 2Ohm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 19ns
- Terminal Kaplaması
- TIN
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 3.9A Tc
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Yükseklik
- 15.87mm
- Fabrika Tedarik Süresi
- 9 Weeks
- Radyasyon Dayanımı
- No
- Ambalaj
- Tube
- Genişlik
- 4.7mm
- Turn On Delay Time
- 12 ns
- Gate Charge Qg Max Vgs
- 12nC @ 10V
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Fet Type
- N-Channel
- Seri
- UniFET-II™
- Case Connection
- ISOLATED
- Vgs Max
- ±25V
- Power Dissipation
- 30W
- JESD-609 Kodu
- e3
- Input Capacitance Ciss Max Vds
- 485pF @ 25V
- Turn Off Delay Time
- 31 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 2.27g
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 2 Ω @ 1.95A, 10V
- Drain To Source Breakdown Voltage
- 500V
- Pin Sayısı
- 3
- Fall Time Typ
- 22 ns
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