Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Gate Charge Qg Max Vgs
- 60nC @ 10V
- Number Of Elements
- 1
- Power Dissipation Max
- 38.5W Tc
- Vgsth Max Id
- 5V @ 250μA
- Yükseklik
- 16.07mm
- Input Capacitance Ciss Max Vds
- 2860pF @ 25V
- Kurşunsuz
- Lead Free
- Genişlik
- 4.9mm
- Voltage Rated Dc
- 500V
- Vgs Max
- ±30V
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.36mm
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Case Connection
- ISOLATED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 3
- Seri
- UniFET™
- Jedec95 Code
- TO-220AB
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Kurşunsuz Kodu
- yes
- Turn Off Delay Time
- 95 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 90 ns
- Qualification Status
- Not Qualified
- REACH Uyumluluk Kodu
- not_compliant
- Rise Time
- 165ns
- Fabrika Tedarik Süresi
- 9 Weeks
- Current Continuous Drain Id25
- 18A Tc
- Weight
- 2.27g
- Parça Durumu
- Active
- Turn On Delay Time
- 55 ns
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3 Full Pack
- Akım Değeri
- 18A
- Pulsed Drain Currentmax Idm
- 72A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 30V
- Transistor Element Material
- SILICON
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