Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3 Full Pack
- Pulsed Drain Currentmax Idm
- 68A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 30V
- Transistor Element Material
- SILICON
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 62 ns
- Rise Time
- 79ns
- Fabrika Tedarik Süresi
- 4 Weeks
- Current Continuous Drain Id25
- 17A Tc
- Weight
- 2.27g
- Parça Durumu
- Active
- Turn On Delay Time
- 48 ns
- Threshold Voltage
- 3V
- Rds On Max Id Vgs
- 340m Ω @ 8.5A, 10V
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Reach Svhc
- No SVHC
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2013
- Ambalaj
- Tube
- Continuous Drain Current Id
- 17A
- Power Dissipation
- 62.5W
- JESD-609 Kodu
- e3
- Drain To Source Breakdown Voltage
- 600V
- Vgsth Max Id
- 5V @ 250μA
- Yükseklik
- 16.07mm
- Input Capacitance Ciss Max Vds
- 3040pF @ 25V
- Genişlik
- 4.9mm
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.36mm
- Vgs Max
- ±30V
- Terminal Sayısı
- 3
- Element Configuration
- Single
- Gate Charge Qg Max Vgs
- 65nC @ 10V
- Number Of Elements
- 1
- Power Dissipation Max
- 62.5W Tc
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