FDPF12N50T

Specifications

JESD-609 Kodu

e3

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

UniFET™

Drain To Source Breakdown Voltage

500V

Montaj

Through Hole

Continuous Drain Current Id

11.5A

Avalanche Energy Rating Eas

456 mJ

Power Dissipation

165W

Case Connection

ISOLATED

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Drainsource On Resistancemax

0.65Ohm

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Turn Off Delay Time

45 ns

Yayın Yılı

2013

Montaj Tipi

Through Hole

Ambalaj

Tube

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Rds On Max Id Vgs

650m Ω @ 6A, 10V

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

30nC @ 10V

Fabrika Tedarik Süresi

9 Weeks

Rise Time

50ns

Weight

2.27g

Current Continuous Drain Id25

11.5A Tc

Number Of Elements

1

Power Dissipation Max

42W Tc

Parça Durumu

Active

Turn On Delay Time

24 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

30 ns

Input Capacitance Ciss Max Vds

1315pF @ 25V

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Terminal Sayısı

3

Operating Mode

ENHANCEMENT MODE