Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Weight
- 2.27g
- Current Continuous Drain Id25
- 10A Tc
- Rise Time
- 50ns
- Fabrika Tedarik Süresi
- 4 Weeks
- Turn On Delay Time
- 25 ns
- Parça Durumu
- Active
- Fall Time Typ
- 50 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 25V
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3 Full Pack
- Pulsed Drain Currentmax Idm
- 40A
- JESD-609 Kodu
- e3
- Drain To Source Breakdown Voltage
- 600V
- Continuous Drain Current Id
- 10A
- Power Dissipation
- 38W
- Avalanche Energy Rating Eas
- 550 mJ
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.75Ohm
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2013
- ECCN Kodu
- EAR99
- Threshold Voltage
- 5V
- Rds On Max Id Vgs
- 750m Ω @ 5A, 10V
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 30nC @ 10V
- Power Dissipation Max
- 38W Tc
- Element Configuration
- Single
- Genişlik
- 4.9mm
- Yükseklik
- 16.07mm
- Input Capacitance Ciss Max Vds
- 1475pF @ 25V
- Uzunluk
- 10.36mm
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±25V
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