Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 25V
- Transistor Element Material
- SILICON
- Terminal Kaplaması
- Tin (Sn)
- Drain To Source Voltage Vdss
- 500V
- Transistor Application
- SWITCHING
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3
- Rise Time
- 34ns
- Fabrika Tedarik Süresi
- 6 Weeks
- Current Continuous Drain Id25
- 8A Tc
- Weight
- 1.8g
- Parça Durumu
- Active
- Turn On Delay Time
- 17 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 27 ns
- Qualification Status
- Not Qualified
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.85Ohm
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj Tipi
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain Currentmax Abs Id
- 8A
- Yayın Yılı
- 2010
- Ambalaj
- Tube
- Rds On Max Id Vgs
- 850m Ω @ 4A, 10V
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Continuous Drain Current Id
- 8A
- Power Dissipation
- 130W
- Yükseklik
- 9.4mm
- Input Capacitance Ciss Max Vds
- 735pF @ 25V
- Genişlik
- 4.83mm
- Vgs Max
- ±25V
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.67mm
- Terminal Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- Gate Charge Qg Max Vgs
- 18nC @ 10V
- Number Of Elements
- 1
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