Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 900m Ω @ 3.5A, 10V
- Ambalaj
- Tube
- Drain Currentmax Abs Id
- 7A
- Yayın Yılı
- 2004
- Montaj Tipi
- Through Hole
- Drainsource On Resistancemax
- 0.9Ohm
- RoHS Durumu
- ROHS3 Compliant
- Avalanche Energy Rating Eas
- 270 mJ
- Power Dissipation
- 89W
- Continuous Drain Current Id
- 7A
- Drain To Source Breakdown Voltage
- 500V
- JESD-609 Kodu
- e3
- Pulsed Drain Currentmax Idm
- 28A
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Transistor Element Material
- SILICON
- Gate To Source Voltage Vgs
- 30V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fall Time Typ
- 35 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 6 ns
- Parça Durumu
- Active
- Weight
- 1.8g
- Current Continuous Drain Id25
- 7A Tc
- Fabrika Tedarik Süresi
- 5 Weeks
- Rise Time
- 55ns
- Radyasyon Dayanımı
- No
- Jedec95 Code
- TO-220AB
- Turn Off Delay Time
- 25 ns
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Montaj
- Through Hole
- Seri
- UniFET™
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 5V @ 250μA
- Terminal Sayısı
- 3
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