Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Transistor Element Material
- SILICON
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -65°C~175°C TJ
- Akım Değeri
- 40A
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Turn On Delay Time
- 9 ns
- Weight
- 1.8g
- Current Continuous Drain Id25
- 40A Tc
- Fabrika Tedarik Süresi
- 10 Weeks
- Rise Time
- 11ns
- Fall Time Typ
- 8 ns
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Ambalaj
- Tube
- Yayın Yılı
- 2000
- Montaj Tipi
- Through Hole
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 18m Ω @ 20A, 10V
- Drain To Source Breakdown Voltage
- 30V
- JESD-609 Kodu
- e3
- Power Dissipation
- 60W
- Continuous Drain Current Id
- 40A
- Terminal Sayısı
- 3
- Uzunluk
- 10.67mm
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±20V
- Genişlik
- 4.83mm
- Voltage Rated Dc
- 30V
- Kurşunsuz
- Lead Free
- Input Capacitance Ciss Max Vds
- 1160pF @ 15V
- Yükseklik
- 9.4mm
- Vgsth Max Id
- 3V @ 250μA
- Power Dissipation Max
- 60W Tc
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 17nC @ 5V
- Element Configuration
- Single
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