Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2013
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 1.5 Ω @ 2.25A, 10V
- Drain To Source Breakdown Voltage
- 500V
- JESD-609 Kodu
- e3
- Power Dissipation
- 78W
- Continuous Drain Current Id
- 4.5A
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 25V
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3
- Parça Durumu
- Active
- Turn On Delay Time
- 12 ns
- Current Continuous Drain Id25
- 4.5A Tc
- Weight
- 1.8g
- Rise Time
- 22ns
- Fabrika Tedarik Süresi
- 4 Weeks
- Qualification Status
- Not Qualified
- Fall Time Typ
- 21 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn Off Delay Time
- 28 ns
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Kurşunsuz Kodu
- yes
- Jedec95 Code
- TO-220AB
- Seri
- UniFET-II™
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Uzunluk
- 10.67mm
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±25V
- Terminal Sayısı
- 3
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