FDP5500-F085

Specifications

Input Capacitance Ciss Max Vds

3565pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Terminal Sayısı

3

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Fet Type

N-Channel

Kılıf / Paket

TO-220-3

Vgsth Max Id

4V @ 250μA

Rise Time

34ns

Gate Charge Qg Max Vgs

269nC @ 20V

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Weight

1.8g

Current Continuous Drain Id25

80A Tc

Parça Durumu

Obsolete

Turn On Delay Time

12 ns

Power Dissipation Max

375W Tc

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single

Fall Time Typ

23 ns

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Drainsource On Resistancemax

0.007Ohm

RoHS Durumu

RoHS Compliant

Kurşunsuz Kodu

yes

Turn Off Delay Time

37 ns

Montaj Tipi

Through Hole

Ambalaj

Tube

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Rds On Max Id Vgs

7m Ω @ 80A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Seri

Automotive, AEC-Q101, UltraFET™

Drain To Source Breakdown Voltage

55V

Continuous Drain Current Id

80A

Montaj

Through Hole