FDP39N20

Specifications

Fall Time Typ

150 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

39A Tc

Weight

1.8g

Number Of Elements

1

Jesd30 Code

R-PSFM-T3

Gate Charge Qg Max Vgs

49nC @ 10V

Fabrika Tedarik Süresi

4 Weeks

Rise Time

160ns

Power Dissipation Max

251W Tc

Parça Durumu

Active

Turn On Delay Time

30 ns

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Vgsth Max Id

5V @ 250μA

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

2130pF @ 25V

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Additional Feature

FAST SWITCHING

Montaj

Through Hole

Continuous Drain Current Id

39A

Avalanche Energy Rating Eas

860 mJ

Power Dissipation

251W

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

200V

Seri

UniFET™

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Rds On Max Id Vgs

66m Ω @ 19.5A, 10V

Turn Off Delay Time

150 ns

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)