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FDP3632

ON Semiconductor

FDP3632

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Drain To Source Breakdown Voltage
100V
JESD-609 Kodu
e3
Power Dissipation
310W
Continuous Drain Current Id
80A
Ambalaj
Tube
Montaj Tipi
Through Hole
Yayın Yılı
2004
RoHS Durumu
ROHS3 Compliant
Reach Svhc
No SVHC
ECCN Kodu
EAR99
Threshold Voltage
4V
Rds On Max Id Vgs
9m Ω @ 80A, 10V
Turn On Delay Time
30 ns
Parça Durumu
Not For New Designs
Weight
1.8g
Current Continuous Drain Id25
12A Ta 80A Tc
Rise Time
39ns
Fabrika Tedarik Süresi
4 Weeks
Fall Time Typ
46 ns
Drive Voltage Max Rds On Min Rds On
6V 10V
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Gate To Source Voltage Vgs
20V
Çalışma Sıcaklığı
-55°C~175°C TJ
Akım Değeri
44A
Fet Type
N-Channel
Contact Plating
Tin
Kılıf / Paket
TO-220-3
Seri
PowerTrench®
Pin Sayısı
3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Case Connection
DRAIN
Montaj
Through Hole
Turn Off Delay Time
96 ns
Direnç
9MOhm
Kurşunsuz Kodu
yes
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 3 days ago)
Radyasyon Dayanımı
No
Jedec95 Code
TO-220AB
Power Dissipation Max
310W Tc

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