Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 30V
- Pulsed Drain Currentmax Idm
- 96A
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Turn On Delay Time
- 40 ns
- Current Continuous Drain Id25
- 24A Tc
- Weight
- 1.8g
- Fabrika Tedarik Süresi
- 6 Weeks
- Rise Time
- 90ns
- Qualification Status
- Not Qualified
- Fall Time Typ
- 65 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Ambalaj
- Tube
- Yayın Yılı
- 2013
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj Tipi
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 175m Ω @ 12A, 10V
- Drain To Source Breakdown Voltage
- 400V
- JESD-609 Kodu
- e3
- Power Dissipation
- 227W
- Continuous Drain Current Id
- 24A
- Terminal Sayısı
- 3
- Vgs Max
- ±30V
- Uzunluk
- 10.1mm
- Operating Mode
- ENHANCEMENT MODE
- Genişlik
- 4.7mm
- Kurşunsuz
- Lead Free
- Input Capacitance Ciss Max Vds
- 3020pF @ 25V
- Yükseklik
- 15.38mm
- Vgsth Max Id
- 5V @ 250μA
- Power Dissipation Max
- 227W Tc
- Number Of Elements
- 1
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