Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Turn On Delay Time
- 45 ns
- Power Dissipation Max
- 250W Tc
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 20A Tc
- Weight
- 1.8g
- Rise Time
- 120ns
- Fabrika Tedarik Süresi
- 6 Weeks
- Gate Charge Qg Max Vgs
- 65nC @ 10V
- Qualification Status
- Not Qualified
- Fall Time Typ
- 60 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Element Configuration
- Single
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±30V
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Gate To Source Voltage Vgs
- 30V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Input Capacitance Ciss Max Vds
- 3390pF @ 25V
- Pulsed Drain Currentmax Idm
- 80A
- Vgsth Max Id
- 5V @ 250μA
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- 500V
- Seri
- UniFET™
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Power Dissipation
- 250W
- Continuous Drain Current Id
- 20A
- Montaj
- Through Hole
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2004
- Turn Off Delay Time
- 100 ns
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
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