Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 4.83mm
- Yükseklik
- 16.51mm
- Input Capacitance Ciss Max Vds
- 1676pF @ 25V
- Terminal Sayısı
- 3
- Uzunluk
- 10.67mm
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±30V
- Vgsth Max Id
- 5V @ 250μA
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 34nC @ 10V
- Power Dissipation Max
- 240W Tc
- Element Configuration
- Single
- Turn Off Delay Time
- 80 ns
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Jedec95 Code
- TO-220AB
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- UniFET-II™
- Montaj
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 30V
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Contact Plating
- Tin
- Pulsed Drain Currentmax Idm
- 48A
- Weight
- 1.8g
- Current Continuous Drain Id25
- 12A Tc
- Fabrika Tedarik Süresi
- 8 Weeks
- Rise Time
- 50ns
- Turn On Delay Time
- 25 ns
- Parça Durumu
- Active
- Fall Time Typ
- 60 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.65Ohm
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