Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2013
- Ambalaj
- Tube
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Direnç
- 650MOhm
- Turn Off Delay Time
- 45 ns
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 650m Ω @ 6A, 10V
- ECCN Kodu
- EAR99
- Jedec95 Code
- TO-220AB
- Seri
- UniFET™
- Drain To Source Breakdown Voltage
- 500V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Avalanche Energy Rating Eas
- 456 mJ
- Power Dissipation
- 165W
- Continuous Drain Current Id
- 11.5A
- Montaj
- Through Hole
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±30V
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 1315pF @ 25V
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 30V
- Vgsth Max Id
- 5V @ 250μA
- Pulsed Drain Currentmax Idm
- 46A
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3
- Parça Durumu
- Active
- Turn On Delay Time
- 24 ns
- Power Dissipation Max
- 165W Tc
- Rise Time
- 50ns
- Jesd30 Code
- R-PSFM-T3
- Gate Charge Qg Max Vgs
- 30nC @ 10V
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