Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Akım Değeri
- 80A
- Turn On Delay Time
- 16 ns
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 6 Weeks
- Rise Time
- 160ns
- Current Continuous Drain Id25
- 18A Ta 80A Tc
- Weight
- 1.8g
- Qualification Status
- Not Qualified
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Fall Time Typ
- 29 ns
- Yayın Yılı
- 2013
- Montaj Tipi
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ambalaj
- Tube
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- RoHS Durumu
- ROHS3 Compliant
- Rds On Max Id Vgs
- 5m Ω @ 80A, 10V
- Threshold Voltage
- 4V
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 60V
- JESD-609 Kodu
- e3
- Power Dissipation
- 245W
- Avalanche Energy Rating Eas
- 470 mJ
- Continuous Drain Current Id
- 80A
- Terminal Sayısı
- 3
- Uzunluk
- 10.67mm
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±20V
- Yükseklik
- 20.4mm
- Input Capacitance Ciss Max Vds
- 3900pF @ 25V
- Voltage Rated Dc
- 60V
- Genişlik
- 4.83mm
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