Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Fall Time Typ
- 60 ns
- Fabrika Tedarik Süresi
- 9 Weeks
- Rise Time
- 144ns
- Weight
- 1.8g
- Current Continuous Drain Id25
- 17A Ta 80A Tc
- Turn On Delay Time
- 17 ns
- Parça Durumu
- Active
- Kılıf / Paket
- TO-220-3
- Contact Plating
- Tin
- Fet Type
- N-Channel
- Akım Değeri
- 80A
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 80A
- Power Dissipation
- 310W
- Avalanche Energy Rating Eas
- 625 mJ
- JESD-609 Kodu
- e3
- Drain To Source Breakdown Voltage
- 60V
- Rds On Max Id Vgs
- 3.8m Ω @ 80A, 10V
- Threshold Voltage
- 4V
- ECCN Kodu
- EAR99
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2013
- Montaj Tipi
- Through Hole
- Ambalaj
- Tube
- Element Configuration
- Single
- Gate Charge Qg Max Vgs
- 124nC @ 10V
- Number Of Elements
- 1
- Power Dissipation Max
- 310W Tc
- Vgsth Max Id
- 4V @ 250μA
- Yükseklik
- 9.65mm
- Input Capacitance Ciss Max Vds
- 6400pF @ 25V
- Genişlik
- 4.83mm
- Voltage Rated Dc
- 60V
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 3
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