FDP030N06

Specifications

Genişlik

4.7mm

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Yükseklik

15.38mm

Input Capacitance Ciss Max Vds

9815pF @ 25V

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Terminal Sayısı

3

Vgs Max

±20V

Uzunluk

10.1mm

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

772A

Vgsth Max Id

4.5V @ 250μA

Current Continuous Drain Id25

120A Tc

Weight

2.421g

Number Of Elements

1

Gate Charge Qg Max Vgs

151nC @ 10V

Fabrika Tedarik Süresi

9 Weeks

Rise Time

178ns

Power Dissipation Max

231W Tc

Turn On Delay Time

39 ns

Parça Durumu

Active

Fall Time Typ

33 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

54 ns

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Ambalaj

Tube

Yayın Yılı

2013

Montaj Tipi

Through Hole

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Rds On Max Id Vgs

3.2m Ω @ 75A, 10V